반도체 데이터 시트

28LV256PC-4 데이터 시트,회로,함수

28LV256PC-4 Datasheet PDF

제조 업체포장설명PDF온도
TRBICPDIPSpeed 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM 28LV256PC-4 PDF
분°C | 맥스°C

  • TRBIC 28LV256JC-3
    Speed 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
  • Turbo-IC 28LV256JC-4
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
  • Turbo-IC 28LV256JC-5
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
  • Turbo-IC 28LV256JC-6
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
  • TRBIC 28LV256JI-3
    Speed 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
  • Turbo-IC 28LV256JI-4
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
  • Turbo-IC 28LV256JI-5
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
  • TRBIC 28LV256JI-6
    Speed 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
  • Turbo-IC 28LV256JM-3
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
  • Turbo-IC 28LV256JM-4
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
  • TRBIC 28LV256JM-5
    Speed 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
  • TRBIC 28LV256JM-6
    Speed 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
  • Turbo-IC 28LV256PC-3
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
  • TRBIC 28LV256PC-4
    Speed 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
  • Turbo-IC 28LV256PC-5
    Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.

© 2024 - 반도체 데이터 시트 사이트맵
Español 中文 Português Русский 日本語 Deutsch العربية Français 한국어 Italiano Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam