28LV256PC-3 데이터 시트,회로,함수
28LV256PC-3 Datasheet PDF
제조 업체 | 포장 | 설명 | PDF | 온도 |
Turbo-IC | PDIP | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256PC-3 PDF
| 분°C | 맥스°C |
- TRBIC 28LV256JC-3
Speed 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - Turbo-IC 28LV256JC-4
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. - Turbo-IC 28LV256JC-5
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. - Turbo-IC 28LV256JC-6
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. - TRBIC 28LV256JI-3
Speed 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - Turbo-IC 28LV256JI-4
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. - Turbo-IC 28LV256JI-5
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. - TRBIC 28LV256JI-6
Speed 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - Turbo-IC 28LV256JM-3
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. - Turbo-IC 28LV256JM-4
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. - TRBIC 28LV256JM-5
Speed 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - TRBIC 28LV256JM-6
Speed 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - Turbo-IC 28LV256PC-3
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. - TRBIC 28LV256PC-4
Speed 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM - Turbo-IC 28LV256PC-5
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.