2S 데이터 시트
| PartNo | 제조 업체 | 설명 |
|---|---|---|
| 2SC2921 | Mospec Semiconductor | POWER TRANSISTORS(15A,160V,150W) |
| 2SC2922 | SANKEN[Sanken electric] | Silicon Epitaxial Planar Transistor(Audio General Purpose) |
| 2SC2923 | Inchange | Silicon Power Transistors |
| 2SC2924 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-252 | |
| 2SC2925 | Matsshita Panasonic | Transistor |
| 2SC2925R | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 700MA I(C) | TO-226AA | |
| 2SC2925S | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 700MA I(C) | TO-226AA | |
| 2SC2925T | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 700MA I(C) | TO-226AA | |
| 2SC2926 | ||
| 2SC2926S | Epitaxial Planar Silicon Transistors | |
| 2SC2927 | Inchange | Silicon Power Transistors |
| 2SC2928 | Hitachi Semiconductor | HIGH VOLTAGE, HIGH SPEED HIGH POWER SWITCHING |
| 2SC2929 | MOLD TYPE BIPOLAR TRANSISTORS | |
| 2SC2930 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 30A I(C) | TO-3 | |
| 2SC2932 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE POWER TRANSISTOR) |
| 2SC2933 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE POWER TRANSISTOR) |
| 2SC2934 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2937 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2938 | MOSPEC[Mospec Semiconductor] | POWER TRANSISTORS(10A400V100W) |
| 2SC2939 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC294 | ||
| 2SC2943 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2944 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2946 | Guangdong | Silicon Epitaxial Transistor |
| 2SC2946(1) | NEC | Silicon transistor |
| 2SC29461 | NEC[NEC] | SILICON EPITAXIAL TRANSISTOR MP-3 |
| 2SC29461K | NEC | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-252AA |
| 2SC29461L | NEC | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-252AA |
| 2SC29461M | NEC | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-252AA |
| 2SC29461N | NEC | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-252AA |
| 2SC2946K | NEC | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-251AA |
| 2SC2946L | NEC | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-251AA |
| 2SC2946M | NEC | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-251AA |
| 2SC2946N | NEC | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-251AA |
| 2SC2951 | Advanced Semiconductor | 2SC2951 High Frequency Transistor Designed General Purpose Oscillator Applications GHz. |
| 2SC2952 | Advanced Semiconductor | 2SC2592 High Frequency Transistor Designed General Purpose VHF-UHF Amplifier Applications. |
| 2SC2953 | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 250MA I(C) | STX-M3 | |
| 2SC2954 | Inchange Semiconductor Company Limited | Silicon Transistor |
| 2SC2954-T1 | NEC | For amplify high frequency, low noise, and wide band. |
| 2SC2954-T2 | NEC | For amplify high frequency, low noise, and wide band. |
| 2SC2958 | NEC[NEC] | SILICON EPITAXIAL TRANSISTOR Audio Frequency Power Amplifier |
| 2SC2958K | BJT | |
| 2SC2958L | BJT | |
| 2SC2958M | BJT | |
| 2SC2959 | NEC[NEC] | SILICON EPITAXIAL TRANSISTOR Audio Frequency Power Amplifier |
| 2SC2959K | BJT | |
| 2SC2959L | BJT | |
| 2SC2959M | BJT | |
| 2SC2960 | Sanyo | PNP/NPN Epitaxial Planar Silicon Transistors |
| 2SC2960E | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAKVAR | |
| 2SC2960F | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAKVAR | |
| 2SC2960G | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAKVAR | |
| 2SC2964 | Fujitsu Media Devices Limited | SILICON HIFH SPEED POWER TRANSISTOR |
| 2SC2965 | Fujitsu Media Devices Limited | SILICON HIFH SPEED POWER TRANSISTOR |
| 2SC2970 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2975 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2979 | hitachi | Silicon Triple Diffused |
| 2SC2981 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2982 | Toshiba Semiconductor | TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) |
| 2SC2982A | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | SOT-89 | |
| 2SC2982B | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | SOT-89 | |
| 2SC2982C | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | SOT-89 | |
| 2SC2982D | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | SOT-89 | |
| 2SC2983 | Toshiba | POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS |
| 2SC2983O | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-251AA | |
| 2SC2983Y | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-251AA | |
| 2SC2987 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2987A | ETC[ETC] | SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
| 2SC2988 | Panasonic Semiconductor | Transistors (Selection Guide Applications Functions) |
| 2SC2995 | Toshiba | HIGH FREQUENCY AMPLIFIER APPLICATIONS |
| 2SC2995O | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SPAK | |
| 2SC2995R | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SPAK | |
| 2SC2995Y | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SPAK | |
| 2SC2996 | Toshiba Semiconductor | TRANSISTOR (FM/AM, LOCAL, HIGH FREQUENCY AMPLIFIER APPLICATIONS) |
| 2SC2996O | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | TO-236AB | |
| 2SC2996R | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | TO-236AB | |
| 2SC2996Y | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | TO-236AB | |
| 2SC2998 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 | |
| 2SC2998E | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 | |
| 2SC2998F | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 | |
| 2SC2998G | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 | |
| 2SC2999 | Sanyo | Epitaxial Planar Silicon Transistor |
| 2SC2999C | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | SPAK | |
| 2SC2999D | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | SPAK | |
| 2SC2999E | Sanyo Semiconductor Corp | TRANSISTOR,BJT,NPN,20V V(BR)CEO,30MA I(C),SPAK |
| 2SC3000 | Sanyo | Epitaxial Planar Silicon Transistor |
| 2SC3000D | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 | |
| 2SC3000E | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 | |
| 2SC3000F | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 | |
| 2SC3001 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE POWER TRANSISTOR) |
| 2SC3004 | Hitachi Semiconductor | Silicon NPN Epitaxial(???NPN????? |
| 2SC3006 | Toshiba Semiconductor | TRANSISTOR BAND POWER AMPLIFIER APPLICATIONS) |
| 2SC3007 | Toshiba Semiconductor | SILICON EPITAXIAL TYPE PROCESS) |
| 2SC3011 | Toshiba | UHF~C BAND NOISE AMPLIFIER APPLICATIONS |
| 2SC3012 | SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR | |
| 2SC3017 | Mitsubishi | EPITAXIAL PLANAR TYPE |
| 2SC3018 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE POWER TRANSISTOR) |
| 2SC3019 | Mitsubishi | EPITAXIAL PLANAR TYPE |
| 2SC3020 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE POWER TRANSISTOR) |
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