2S 데이터 시트
| PartNo | 제조 업체 | 설명 |
|---|---|---|
| 2SC5180(NE68618) | Discrete | |
| 2SC5180-T1 | NEC | High fT, high gain transistor |
| 2SC5180-T2 | NEC | High fT, high gain transistor |
| 2SC5180T1 | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-343R | |
| 2SC5181 | EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION | |
| 2SC5181(NE68619) | Discrete | |
| 2SC5181-T1 | EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION | |
| 2SC5181T1 | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-416 | |
| 2SC5182 | NEC[NEC] | SURFACE MOUNT SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC5182-T1 | NEC | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T2 | EPITAXIAL SILICON TRANSISTOR MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION | |
| 2SC5182T1 | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | TO-236AB | |
| 2SC5183 | NEC[NEC] | SURFACE MOUNT SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC5183-T1 | NEC | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5183-T2 | EPITAXIAL SILICON TRANSISTOR 4-PIN MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION | |
| 2SC518383R | NEC[NEC] | SURFACE MOUNT SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC5183R | BJT | |
| 2SC5183R-T1 | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143 | |
| 2SC5183R-T2 | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143 | |
| 2SC5183T1 | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143R | |
| 2SC5184 | NEC[NEC] | EPITAXIAL SILICON TRANSISTOR SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5184-T1 | NEC[NEC] | EPITAXIAL SILICON TRANSISTOR SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5184-T2 | NEC[NEC] | EPITAXIAL SILICON TRANSISTOR SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5184T1 | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-323 | |
| 2SC5185 | NEC[NEC] | SURFACE MOUNT SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC5185(NE68718) | Discrete | |
| 2SC5185-T1 | EPITAXIAL SILICON TRANSISTOR SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION | |
| 2SC5185-T2 | EPITAXIAL SILICON TRANSISTOR SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION | |
| 2SC5185T1 | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-343R | |
| 2SC5186 | EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION | |
| 2SC5186(NE68719) | Discrete | |
| 2SC5186-T1 | EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION | |
| 2SC5187 | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1.5A I(C) | SOT-89 | |
| 2SC5188 | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SOT-89 | |
| 2SC5189 | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SOT-89 | |
| 2SC5190 | Panasonic Semiconductor | Silicon epitaxial planer type(For low-voltage high-frequency amplification) |
| 2SC5191 | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR | |
| 2SC5191(NE68833) | NEC | Discrete |
| 2SC5191-T1 | NEC[NEC] | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR |
| 2SC5191-T2 | NEC[NEC] | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR |
| 2SC5192 | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD | |
| 2SC5192(NE68839) | Discrete | |
| 2SC5192-T1 | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD | |
| 2SC5192-T2 | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD | |
| 2SC5192R | NEC | Low-voltage drive, high-frequency transistor |
| 2SC5192R-T1 | NEC | Low-voltage drive, high-frequency transistor |
| 2SC5192R-T2 | NEC | Low-voltage drive, high-frequency transistor |
| 2SC5193 | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD | |
| 2SC5193(NE68830) | Discrete | |
| 2SC5193-T1 | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD | |
| 2SC5193-T2 | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD | |
| 2SC5194 | NEC[NEC] | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR |
| 2SC5194(NE68818) | Discrete | |
| 2SC5194-T1 | NEC[NEC] | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR |
| 2SC5194-T2 | NEC[NEC] | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR |
| 2SC5194F-T2 | NEC | TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 100MA I(C) | SOT-343R |
| 2SC5195 | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR | |
| 2SC5195(NE68819) | Discrete | |
| 2SC5195-T1 | MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR | |
| 2SC5196 | Toshiba Semiconductor | TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) |
| 2SC519606 | Toshiba Semiconductor | Silicon Triple Diffused Type Power Amplifier Applications |
| 2SC5196O | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-247VAR | |
| 2SC5196R | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-247VAR | |
| 2SC5196_06 | Toshiba Semiconductor | Silicon NPN Triple Diffused Type Power Amplifier Applications |
| 2SC5197 | Toshiba | POWER AMPLIFIER APPLICATIONS |
| 2SC519706 | Toshiba | Silicon Triple Diffused Type Power Amplifier Applications |
| 2SC5197O | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 8A I(C) | TO-247VAR | |
| 2SC5197R | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 8A I(C) | TO-247VAR | |
| 2SC5197_06 | Toshiba Semiconductor | Silicon NPN Triple Diffused Type Power Amplifier Applications |
| 2SC5198 | Toshiba Semiconductor | TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) |
| 2SC519806 | Toshiba Semiconductor | Silicon Triple Diffused Type Power Amplifier Applications |
| 2SC5198O | TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 10A I(C) | TO-247VAR | |
| 2SC5198R | TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 10A I(C) | TO-247VAR | |
| 2SC5198_06 | Toshiba Semiconductor | Silicon NPN Triple Diffused Type Power Amplifier Applications |
| 2SC5199 | Toshiba | POWER AMPLIFIER APPLICATIONS |
| 2SC5199O | TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 12A I(C) | TO-264AA | |
| 2SC5199R | TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 12A I(C) | TO-264AA | |
| 2SC519A | TRANSISTOR | BJT | NPN | 110V V(BR)CEO | 7A I(C) | TO-3 | |
| 2SC5200 | Toshiba Semiconductor | TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) |
| 2SC5200O | TRANSISTOR | BJT | NPN | 230V V(BR)CEO | 15A I(C) | TO-264AA | |
| 2SC5200OTU | Fairchild Semiconductor | Epitaxial Silicon Transistor |
| 2SC5200R | TRANSISTOR | BJT | NPN | 230V V(BR)CEO | 15A I(C) | TO-264AA | |
| 2SC5200RTU | Fairchild Semiconductor | Epitaxial Silicon Transistor |
| 2SC5201 | Toshiba | HIGH VOLTAGE SWITVHING APPLICATIONS |
| 2SC520106 | Toshiba Semiconductor | Silicon Triple Diffused Mesa Type High-Voltage Switching Applications |
| 2SC5201_06 | Toshiba Semiconductor | Silicon NPN Triple Diffused Mesa Type High-Voltage Switching Applications |
| 2SC5206 | Hitachi Semiconductor | Silicon NPN Triple Diffused(???????PN????? |
| 2SC5207 | From datasheet system | |
| 2SC5207A | Hitachi Semiconductor | SILICON TRIPLE DIFFUSED PLANAR |
| 2SC5208 | Toshiba Semiconductor | Silicon Triple Diffused Type High-Voltage Switching Applications |
| 2SC5209 | Isahaya Electronics Corporation | SMALL-SIGNAL TRANSISTOR |
| 2SC520A | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-3 | |
| 2SC5210 | Isahaya Electronics Corporation | SMALL TYPE COLOUR CHROMA OUTPUT APPLICATION SILICON TRIPLE DIFFUSED TYPE |
| 2SC5211 | Guangdong Kexin Industrial Co.,Ltd | Small Signal Transistor |
| 2SC5212 | Isahaya Electronics Corporation | HIGH CURRENT DRIVE APPLICATION SILICON EPITAXIAL TYPE |
| 2SC5213 | ETC | 2SC5213 |
| 2SC5214 | Guangdong Kexin Industrial Co.,Ltd | Small Signal Transistor |
| 2SC5216 | Panasonic Semiconductor | Silicon epitaxial planer type(For high-frequency amplification/oscillation/mixing) |
| 2SC5218 | hitachi | Silicon Triple Diffused |
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